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The electric field points from the n or positive plate of the capacitor to the p or negative plate of the capacitor. That is why the the diode start conducting when forward biased when source is at more than 03 or 07 volts.
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Electric field in diode. In the case of the diode the p material has minority carriers few electrons and these can easily flow across the electric field into the n material. The pin diode obeys the standard diode equation for low frequency signals. Integration of the charge density in an abrupt p n diode as shown in figure 431 a is given by.
The electric field has to be zero outside the depletion region since any field would cause the free carriers to move thereby eliminating the electric field. The electric field inside the diode will be opposite to that of the electric field of the source. It is simple than you think.
If the p n junction diode is forward biased with approximately 07 volts for silicon diode or 03 volts for germanium diode the p n junction diode starts allowing the electric current. Thus will cause a barrier potential of 03 or 07 volts opposite to the source when its forward biased. This electric field helps in speeding up of the transport of charge carriers from the p to the n region which results in faster operation of the diode making it a suitable device for high frequency operations.
So the direction of electric field given by the field lines flows from positive ions rightarrow negative ions. For a few centuries after faraday gave the concept weve assumed electric field lines to start from positive charges and terminate at the negative ones. This constitutes the so called leakage current.
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